BOOT (1)Boost capacitor for the high-side FET gate driver. Connect 0.01μF low ESR capacitor from BOOT pin to PH pin.
NC (2)Not connected internally.
NC (3)Not connected internally.
VSENSE (4)Feedback voltage for the regulator. Connect to output voltage divider.
ENA (5)On and off control. Below 0.5V, the device stops switching. Above 1.3V, the device starts switching. ENA can be left floating. This pin is internally connected to a 1.5MΩ pullup resistor. Do not connect this pin with a resistor to ground.
GND (6)Ground. Connect to DAP.
VIN (7)Input supply voltage. Bypass VIN pin to GND pin close to device package with a high quality, low ESR ceramic capacitor. Place the bypass capacitor within 1mm of the Vin pin and within 1mm of the GND pin.
PH (8)Source of the high side power MOSFET. Connected to external inductor and diode.
DAPGND pin must be connected to the exposed pad for proper operation.